RFHIC · PRODUCT & SPECIFICATIONS
RNP58200-10 GaN power amplifier module
GaN-on-SiC RF amplifier module. Manufacturer electrical values are specified at 40 VDC, case temperature 25 C and 50-ohm source/load impedance.
| Parameter | Specification |
|---|---|
| Operating frequency | 5725–5875 MHz |
| Typical CW output power | 200 W |
| Typical power gain | 40 dB |
| Typical operating voltage | 40 VDC |
Who manufactures RNP58200-10 GaN power amplifier module?
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